Magnetophotoluminescence of GaN/AlxGa1-xN quantum wells: Valence band reordering and excitonic binding energies

Slični predmeti

• Observation of magnetophotoluminescence from a GaN/AlxGa1-xN heterojunction
  od: Shields, P, i dr.
  Izdano: (2002)
• Physics-based modeling and characterization of low frequency noise behavior for AlxGa1−xN/GaN HEMT
  od: Jing Cai, i dr.
  Izdano: (2024-03-01)
• Effect of Ge diffusion on AlxGa1-xN/GaN high electron mobility transistors on a thin silicon-on-insulator
  od: Bera, L. K., i dr.
  Izdano: (2014)
• Effect of oxygen on the crystallinity and defect state of AlxGa1−xN epilayers
  od: Chang Wan Ahn, i dr.
  Izdano: (2023-01-01)
• Microstructural characterization of AlxGa1−xN/GaN high electron mobility transistor layers on 200 mm Si(111) substrates
  od: Aabdin, Zainul, i dr.
  Izdano: (2024)