Inhibición de la relajación plástica en heteroestructuras InGaAs/GaAs(001) crecidas a baja temperatura
Low and high temperature grown InGaAs/GaAs(001) epilayers have been studied by Transmission Electron Microscopy and Double Crystal X Ray Diffraction. Our results show that low temperature growth inhibits plastic relaxation, and misfit dislocations only appearing in the subsequent thermal annealing....
| Hlavní autoři: | , , , , , |
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| Médium: | Článek |
| Jazyk: | English |
| Vydáno: |
Elsevier
2004-04-01
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| Edice: | Boletín de la Sociedad Española de Cerámica y Vidrio |
| Témata: | |
| On-line přístup: | http://ceramicayvidrio.revistas.csic.es/index.php/ceramicayvidrio/article/view/544/564 |