4H-SiC LDMOS Integrating a Trench MOS Channel Diode for Improved Reverse Recovery Performance
In this paper, a 4H-SiC lateral gate MOSFET incorporating a trench MOS channel diode at the source side is explored to improve the reverse recovery characteristics. In addition, a 2D numerical simulator (ATLAS) is used to investigate the electrical characteristics of the devices. The investigational...
| Κύριοι συγγραφείς: | , , |
|---|---|
| Μορφή: | Άρθρο |
| Γλώσσα: | English |
| Έκδοση: |
MDPI AG
2023-04-01
|
| Σειρά: | Micromachines |
| Θέματα: | |
| Διαθέσιμο Online: | https://www.mdpi.com/2072-666X/14/5/950 |