Interaction of Negative Bias Instability and Self-Heating Effect on Threshold Voltage and SRAM (Static Random-Access Memory) Stability of Nanosheet Field-Effect Transistors

Interaction of Negative Bias Instability and Self-Heating Effect on Threshold Voltage and SRAM (Static Random-Access Memory) Stability of Nanosheet Field-Effect Transistors

In this paper, we investigate the effects of negative bias instability (NBTI) and self-heating effect (SHE) on threshold voltage in NSFETs. To explore accurately the interaction between SHE and NBTI, we established an NBTI simulation framework based on trap microdynamics and considered the influence...

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Bibliographic Details
Main Authors: Xiaoming Li, Yali Shao, Yunqi Wang, Fang Liu, Fengyu Kuang, Yiqi Zhuang, Cong Li
Format: Article
Language:English
Published: MDPI AG 2024-03-01
Series:Micromachines
Subjects:
NSFET
negative bias instability (NBTI)
self-heating effect (SHE)
nanosheet width
reliability
technology computer-aided design (TCAD)
Online Access:https://www.mdpi.com/2072-666X/15/3/420

Internet

https://www.mdpi.com/2072-666X/15/3/420

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