Manufacturing Issues of BEOL CMOS-MEMS Devices
In this paper we present a comprehensive report on the issues found during the manufacturing of high-yield CMOS-MEMS sensors based on vapor-phase hydrogen fluoride (vapor-<inline-formula> <tex-math notation="LaTeX">$HF$ </tex-math></inline-formula>) oxide etching. D...
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Language: | English |
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IEEE
2021-01-01
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Series: | IEEE Access |
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Online Access: | https://ieeexplore.ieee.org/document/9447709/ |
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author | Juan Valle Daniel Fernandez Olivier Gibrat Jordi Madrenas |
author_facet | Juan Valle Daniel Fernandez Olivier Gibrat Jordi Madrenas |
author_sort | Juan Valle |
collection | DOAJ |
description | In this paper we present a comprehensive report on the issues found during the manufacturing of high-yield CMOS-MEMS sensors based on vapor-phase hydrogen fluoride (vapor-<inline-formula> <tex-math notation="LaTeX">$HF$ </tex-math></inline-formula>) oxide etching. During the study we have identified the main issues affecting CMOS-MEMS high-yield manufacturing regarding the silicon oxide as a sacrificial material, the passivation as a release mask, the BEOL as structural material for MEMS design and the aluminum-sputtering as a sealing layer for the MEMS cavity. This study has been carried out by systematically analyzing over 100 full wafers in 10 different runs on four different foundries using <inline-formula> <tex-math notation="LaTeX">${\mathrm {0.5~ \mu m }}$ </tex-math></inline-formula>, <inline-formula> <tex-math notation="LaTeX">${\mathrm {0.18~ \mu m }}$ </tex-math></inline-formula> and <inline-formula> <tex-math notation="LaTeX">${\mathrm {0.15~ \mu m }}$ </tex-math></inline-formula> CMOS processes, containing both test structures and full-sensor designs. |
first_indexed | 2024-12-18T01:55:47Z |
format | Article |
id | doaj.art-bbbdf345e719440daa3820f9778f13cf |
institution | Directory Open Access Journal |
issn | 2169-3536 |
language | English |
last_indexed | 2024-12-18T01:55:47Z |
publishDate | 2021-01-01 |
publisher | IEEE |
record_format | Article |
series | IEEE Access |
spelling | doaj.art-bbbdf345e719440daa3820f9778f13cf2022-12-21T21:24:54ZengIEEEIEEE Access2169-35362021-01-019831498316210.1109/ACCESS.2021.30868679447709Manufacturing Issues of BEOL CMOS-MEMS DevicesJuan Valle0https://orcid.org/0000-0001-9849-7868Daniel Fernandez1https://orcid.org/0000-0002-1076-6697Olivier Gibrat2https://orcid.org/0000-0002-4041-6014Jordi Madrenas3https://orcid.org/0000-0001-5905-9179Department of Electronic Engineering, Universitat Politècnica de Catalunya, Barcelona, SpainEdifici Cn. Facultat Ciències Nord, Institut de Física d’Altes Energies (IFAE-BIST), Universitat Autònoma de Barcelona, Bellaterra, SpainFreelancer, Terrassa, SpainDepartment of Electronic Engineering, Universitat Politècnica de Catalunya, Barcelona, SpainIn this paper we present a comprehensive report on the issues found during the manufacturing of high-yield CMOS-MEMS sensors based on vapor-phase hydrogen fluoride (vapor-<inline-formula> <tex-math notation="LaTeX">$HF$ </tex-math></inline-formula>) oxide etching. During the study we have identified the main issues affecting CMOS-MEMS high-yield manufacturing regarding the silicon oxide as a sacrificial material, the passivation as a release mask, the BEOL as structural material for MEMS design and the aluminum-sputtering as a sealing layer for the MEMS cavity. This study has been carried out by systematically analyzing over 100 full wafers in 10 different runs on four different foundries using <inline-formula> <tex-math notation="LaTeX">${\mathrm {0.5~ \mu m }}$ </tex-math></inline-formula>, <inline-formula> <tex-math notation="LaTeX">${\mathrm {0.18~ \mu m }}$ </tex-math></inline-formula> and <inline-formula> <tex-math notation="LaTeX">${\mathrm {0.15~ \mu m }}$ </tex-math></inline-formula> CMOS processes, containing both test structures and full-sensor designs.https://ieeexplore.ieee.org/document/9447709/CMOS-MEMSdesign techniqueshydrogen fluoridesilicon oxidevapor-HFrelease |
spellingShingle | Juan Valle Daniel Fernandez Olivier Gibrat Jordi Madrenas Manufacturing Issues of BEOL CMOS-MEMS Devices IEEE Access CMOS-MEMS design techniques hydrogen fluoride silicon oxide vapor-HF release |
title | Manufacturing Issues of BEOL CMOS-MEMS Devices |
title_full | Manufacturing Issues of BEOL CMOS-MEMS Devices |
title_fullStr | Manufacturing Issues of BEOL CMOS-MEMS Devices |
title_full_unstemmed | Manufacturing Issues of BEOL CMOS-MEMS Devices |
title_short | Manufacturing Issues of BEOL CMOS-MEMS Devices |
title_sort | manufacturing issues of beol cmos mems devices |
topic | CMOS-MEMS design techniques hydrogen fluoride silicon oxide vapor-HF release |
url | https://ieeexplore.ieee.org/document/9447709/ |
work_keys_str_mv | AT juanvalle manufacturingissuesofbeolcmosmemsdevices AT danielfernandez manufacturingissuesofbeolcmosmemsdevices AT oliviergibrat manufacturingissuesofbeolcmosmemsdevices AT jordimadrenas manufacturingissuesofbeolcmosmemsdevices |