Manufacturing Issues of BEOL CMOS-MEMS Devices

In this paper we present a comprehensive report on the issues found during the manufacturing of high-yield CMOS-MEMS sensors based on vapor-phase hydrogen fluoride (vapor-<inline-formula> <tex-math notation="LaTeX">$HF$ </tex-math></inline-formula>) oxide etching. D...

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Main Authors: Juan Valle, Daniel Fernandez, Olivier Gibrat, Jordi Madrenas
Format: Article
Language:English
Published: IEEE 2021-01-01
Series:IEEE Access
Subjects:
Online Access:https://ieeexplore.ieee.org/document/9447709/
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author Juan Valle
Daniel Fernandez
Olivier Gibrat
Jordi Madrenas
author_facet Juan Valle
Daniel Fernandez
Olivier Gibrat
Jordi Madrenas
author_sort Juan Valle
collection DOAJ
description In this paper we present a comprehensive report on the issues found during the manufacturing of high-yield CMOS-MEMS sensors based on vapor-phase hydrogen fluoride (vapor-<inline-formula> <tex-math notation="LaTeX">$HF$ </tex-math></inline-formula>) oxide etching. During the study we have identified the main issues affecting CMOS-MEMS high-yield manufacturing regarding the silicon oxide as a sacrificial material, the passivation as a release mask, the BEOL as structural material for MEMS design and the aluminum-sputtering as a sealing layer for the MEMS cavity. This study has been carried out by systematically analyzing over 100 full wafers in 10 different runs on four different foundries using <inline-formula> <tex-math notation="LaTeX">${\mathrm {0.5~ \mu m }}$ </tex-math></inline-formula>, <inline-formula> <tex-math notation="LaTeX">${\mathrm {0.18~ \mu m }}$ </tex-math></inline-formula> and <inline-formula> <tex-math notation="LaTeX">${\mathrm {0.15~ \mu m }}$ </tex-math></inline-formula> CMOS processes, containing both test structures and full-sensor designs.
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spelling doaj.art-bbbdf345e719440daa3820f9778f13cf2022-12-21T21:24:54ZengIEEEIEEE Access2169-35362021-01-019831498316210.1109/ACCESS.2021.30868679447709Manufacturing Issues of BEOL CMOS-MEMS DevicesJuan Valle0https://orcid.org/0000-0001-9849-7868Daniel Fernandez1https://orcid.org/0000-0002-1076-6697Olivier Gibrat2https://orcid.org/0000-0002-4041-6014Jordi Madrenas3https://orcid.org/0000-0001-5905-9179Department of Electronic Engineering, Universitat Polit&#x00E8;cnica de Catalunya, Barcelona, SpainEdifici Cn. Facultat Ciències Nord, Institut de F&#x00ED;sica d&#x2019;Altes Energies (IFAE-BIST), Universitat Aut&#x00F2;noma de Barcelona, Bellaterra, SpainFreelancer, Terrassa, SpainDepartment of Electronic Engineering, Universitat Polit&#x00E8;cnica de Catalunya, Barcelona, SpainIn this paper we present a comprehensive report on the issues found during the manufacturing of high-yield CMOS-MEMS sensors based on vapor-phase hydrogen fluoride (vapor-<inline-formula> <tex-math notation="LaTeX">$HF$ </tex-math></inline-formula>) oxide etching. During the study we have identified the main issues affecting CMOS-MEMS high-yield manufacturing regarding the silicon oxide as a sacrificial material, the passivation as a release mask, the BEOL as structural material for MEMS design and the aluminum-sputtering as a sealing layer for the MEMS cavity. This study has been carried out by systematically analyzing over 100 full wafers in 10 different runs on four different foundries using <inline-formula> <tex-math notation="LaTeX">${\mathrm {0.5~ \mu m }}$ </tex-math></inline-formula>, <inline-formula> <tex-math notation="LaTeX">${\mathrm {0.18~ \mu m }}$ </tex-math></inline-formula> and <inline-formula> <tex-math notation="LaTeX">${\mathrm {0.15~ \mu m }}$ </tex-math></inline-formula> CMOS processes, containing both test structures and full-sensor designs.https://ieeexplore.ieee.org/document/9447709/CMOS-MEMSdesign techniqueshydrogen fluoridesilicon oxidevapor-HFrelease
spellingShingle Juan Valle
Daniel Fernandez
Olivier Gibrat
Jordi Madrenas
Manufacturing Issues of BEOL CMOS-MEMS Devices
IEEE Access
CMOS-MEMS
design techniques
hydrogen fluoride
silicon oxide
vapor-HF
release
title Manufacturing Issues of BEOL CMOS-MEMS Devices
title_full Manufacturing Issues of BEOL CMOS-MEMS Devices
title_fullStr Manufacturing Issues of BEOL CMOS-MEMS Devices
title_full_unstemmed Manufacturing Issues of BEOL CMOS-MEMS Devices
title_short Manufacturing Issues of BEOL CMOS-MEMS Devices
title_sort manufacturing issues of beol cmos mems devices
topic CMOS-MEMS
design techniques
hydrogen fluoride
silicon oxide
vapor-HF
release
url https://ieeexplore.ieee.org/document/9447709/
work_keys_str_mv AT juanvalle manufacturingissuesofbeolcmosmemsdevices
AT danielfernandez manufacturingissuesofbeolcmosmemsdevices
AT oliviergibrat manufacturingissuesofbeolcmosmemsdevices
AT jordimadrenas manufacturingissuesofbeolcmosmemsdevices