Intensity determination of the scattering rates in the monolayer graphene
The results of simulation of the electron scattering rates in a single graphene layer without substrate are presented. High mobility of charge carriers, maximally obtained among all known materials, makes graphene a promising material for the creation of new semiconductor devices with good output ch...
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Format: | Article |
Language: | Russian |
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Educational institution «Belarusian State University of Informatics and Radioelectronics»
2019-06-01
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Series: | Doklady Belorusskogo gosudarstvennogo universiteta informatiki i radioèlektroniki |
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Online Access: | https://doklady.bsuir.by/jour/article/view/903 |
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author | V. V. Murav'ev V. N. Mishchenka |
author_facet | V. V. Murav'ev V. N. Mishchenka |
author_sort | V. V. Murav'ev |
collection | DOAJ |
description | The results of simulation of the electron scattering rates in a single graphene layer without substrate are presented. High mobility of charge carriers, maximally obtained among all known materials, makes graphene a promising material for the creation of new semiconductor devices with good output characteristics. The prevalence of electron-electron scattering over other types of scattering in the region of moderate field energy in a single graphene layer is established. The investigated dependences of the rates of carrier scattering will enable to obtain the main characteristics of charge carrier transfer in semiconductor structures containing graphene layers by modeling using the Monte Carlo method. |
first_indexed | 2024-04-10T03:13:44Z |
format | Article |
id | doaj.art-c20a76a4316247f59bc8de8b8d237925 |
institution | Directory Open Access Journal |
issn | 1729-7648 |
language | Russian |
last_indexed | 2024-04-10T03:13:44Z |
publishDate | 2019-06-01 |
publisher | Educational institution «Belarusian State University of Informatics and Radioelectronics» |
record_format | Article |
series | Doklady Belorusskogo gosudarstvennogo universiteta informatiki i radioèlektroniki |
spelling | doaj.art-c20a76a4316247f59bc8de8b8d2379252023-03-13T07:33:17ZrusEducational institution «Belarusian State University of Informatics and Radioelectronics»Doklady Belorusskogo gosudarstvennogo universiteta informatiki i radioèlektroniki1729-76482019-06-01064247902Intensity determination of the scattering rates in the monolayer grapheneV. V. Murav'ev0V. N. Mishchenka1Belarusian state university of informatics and radioelectronicsBelarusian state university of informatics and radioelectronicsThe results of simulation of the electron scattering rates in a single graphene layer without substrate are presented. High mobility of charge carriers, maximally obtained among all known materials, makes graphene a promising material for the creation of new semiconductor devices with good output characteristics. The prevalence of electron-electron scattering over other types of scattering in the region of moderate field energy in a single graphene layer is established. The investigated dependences of the rates of carrier scattering will enable to obtain the main characteristics of charge carrier transfer in semiconductor structures containing graphene layers by modeling using the Monte Carlo method.https://doklady.bsuir.by/jour/article/view/903graphenesemiconductor structurescattering rateselectron transport processesmonte carlo method |
spellingShingle | V. V. Murav'ev V. N. Mishchenka Intensity determination of the scattering rates in the monolayer graphene Doklady Belorusskogo gosudarstvennogo universiteta informatiki i radioèlektroniki graphene semiconductor structure scattering rates electron transport processes monte carlo method |
title | Intensity determination of the scattering rates in the monolayer graphene |
title_full | Intensity determination of the scattering rates in the monolayer graphene |
title_fullStr | Intensity determination of the scattering rates in the monolayer graphene |
title_full_unstemmed | Intensity determination of the scattering rates in the monolayer graphene |
title_short | Intensity determination of the scattering rates in the monolayer graphene |
title_sort | intensity determination of the scattering rates in the monolayer graphene |
topic | graphene semiconductor structure scattering rates electron transport processes monte carlo method |
url | https://doklady.bsuir.by/jour/article/view/903 |
work_keys_str_mv | AT vvmuravev intensitydeterminationofthescatteringratesinthemonolayergraphene AT vnmishchenka intensitydeterminationofthescatteringratesinthemonolayergraphene |