Intensity determination of the scattering rates in the monolayer graphene

The results of simulation of the electron scattering rates in a single graphene layer without substrate are presented. High mobility of charge carriers, maximally obtained among all known materials, makes graphene a promising material for the creation of new semiconductor devices with good output ch...

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Main Authors: V. V. Murav'ev, V. N. Mishchenka
Format: Article
Language:Russian
Published: Educational institution «Belarusian State University of Informatics and Radioelectronics» 2019-06-01
Series:Doklady Belorusskogo gosudarstvennogo universiteta informatiki i radioèlektroniki
Subjects:
Online Access:https://doklady.bsuir.by/jour/article/view/903
_version_ 1797881038137982976
author V. V. Murav'ev
V. N. Mishchenka
author_facet V. V. Murav'ev
V. N. Mishchenka
author_sort V. V. Murav'ev
collection DOAJ
description The results of simulation of the electron scattering rates in a single graphene layer without substrate are presented. High mobility of charge carriers, maximally obtained among all known materials, makes graphene a promising material for the creation of new semiconductor devices with good output characteristics. The prevalence of electron-electron scattering over other types of scattering in the region of moderate field energy in a single graphene layer is established. The investigated dependences of the rates of carrier scattering will enable to obtain the main characteristics of charge carrier transfer in semiconductor structures containing graphene layers by modeling using the Monte Carlo method.
first_indexed 2024-04-10T03:13:44Z
format Article
id doaj.art-c20a76a4316247f59bc8de8b8d237925
institution Directory Open Access Journal
issn 1729-7648
language Russian
last_indexed 2024-04-10T03:13:44Z
publishDate 2019-06-01
publisher Educational institution «Belarusian State University of Informatics and Radioelectronics»
record_format Article
series Doklady Belorusskogo gosudarstvennogo universiteta informatiki i radioèlektroniki
spelling doaj.art-c20a76a4316247f59bc8de8b8d2379252023-03-13T07:33:17ZrusEducational institution «Belarusian State University of Informatics and Radioelectronics»Doklady Belorusskogo gosudarstvennogo universiteta informatiki i radioèlektroniki1729-76482019-06-01064247902Intensity determination of the scattering rates in the monolayer grapheneV. V. Murav'ev0V. N. Mishchenka1Belarusian state university of informatics and radioelectronicsBelarusian state university of informatics and radioelectronicsThe results of simulation of the electron scattering rates in a single graphene layer without substrate are presented. High mobility of charge carriers, maximally obtained among all known materials, makes graphene a promising material for the creation of new semiconductor devices with good output characteristics. The prevalence of electron-electron scattering over other types of scattering in the region of moderate field energy in a single graphene layer is established. The investigated dependences of the rates of carrier scattering will enable to obtain the main characteristics of charge carrier transfer in semiconductor structures containing graphene layers by modeling using the Monte Carlo method.https://doklady.bsuir.by/jour/article/view/903graphenesemiconductor structurescattering rateselectron transport processesmonte carlo method
spellingShingle V. V. Murav'ev
V. N. Mishchenka
Intensity determination of the scattering rates in the monolayer graphene
Doklady Belorusskogo gosudarstvennogo universiteta informatiki i radioèlektroniki
graphene
semiconductor structure
scattering rates
electron transport processes
monte carlo method
title Intensity determination of the scattering rates in the monolayer graphene
title_full Intensity determination of the scattering rates in the monolayer graphene
title_fullStr Intensity determination of the scattering rates in the monolayer graphene
title_full_unstemmed Intensity determination of the scattering rates in the monolayer graphene
title_short Intensity determination of the scattering rates in the monolayer graphene
title_sort intensity determination of the scattering rates in the monolayer graphene
topic graphene
semiconductor structure
scattering rates
electron transport processes
monte carlo method
url https://doklady.bsuir.by/jour/article/view/903
work_keys_str_mv AT vvmuravev intensitydeterminationofthescatteringratesinthemonolayergraphene
AT vnmishchenka intensitydeterminationofthescatteringratesinthemonolayergraphene