Investigation into the MOCVD Growth and Optical Properties of InGaN/GaN Quantum Wells by Modulating NH<sub>3</sub> Flux

In this study, the surface morphology and luminescence characteristics of InGaN/GaN multiple quantum wells were studied by applying different flow rates of ammonia during MOCVD growth, and the best growth conditions of InGaN layers for green laser diodes were explored. Different emission peak charac...

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Bibliographic Details
Main Authors: Zhenyu Chen, Feng Liang, Degang Zhao, Jing Yang, Ping Chen, Desheng Jiang
Format: Article
Language:English
Published: MDPI AG 2023-01-01
Series:Crystals
Subjects:
Online Access:https://www.mdpi.com/2073-4352/13/1/127