Investigation into the MOCVD Growth and Optical Properties of InGaN/GaN Quantum Wells by Modulating NH<sub>3</sub> Flux
In this study, the surface morphology and luminescence characteristics of InGaN/GaN multiple quantum wells were studied by applying different flow rates of ammonia during MOCVD growth, and the best growth conditions of InGaN layers for green laser diodes were explored. Different emission peak charac...
Main Authors: | , , , , , |
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Format: | Article |
Language: | English |
Published: |
MDPI AG
2023-01-01
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Series: | Crystals |
Subjects: | |
Online Access: | https://www.mdpi.com/2073-4352/13/1/127 |