Hole transport in strained SiGe-channel MOSFETs : velocity in scaled devices and mobility under applied mechanical strain

Thesis (Ph. D.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 2010.

Bibliographic Details
Main Author:	Gomez, Leonardo, Ph. D. Massachusetts Institute of Technology
Other Authors:	Judy L. Hoyt.
Format:	Thesis
Language:	eng
Published:	Massachusetts Institute of Technology 2010
Subjects:	Electrical Engineering and Computer Science.
Online Access:	http://hdl.handle.net/1721.1/60144

Internet

http://hdl.handle.net/1721.1/60144