Surface third and fifth harmonic generation at crystalline Si for non-invasive inspection of Si wafer’s inter-layer defects
Detection of inter-layer and internal defects in semiconductor silicon (Si) wafers by non-contact, non-destructive and depth-resolving techniques with a high lateral and depth resolution is one of the challenging tasks in modern semiconductor industry. In this paper, we report that nonlinear optical...
| Main Authors: | , , , , , , |
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| Other Authors: | |
| Format: | Journal Article |
| Language: | English |
| Published: |
2019
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| Subjects: | |
| Online Access: | https://hdl.handle.net/10356/81896 http://hdl.handle.net/10220/47502 |