[001] zone-axis bright-field diffraction contrast from coherent Ge(Si) islands on Si(001).
Coherent Ge(Si)/Si(001) quantum dot islands grown by solid source molecular beam epitaxy at a growth temperature of 700 degrees C were investigated using transmission electron microscopy working at 300kV. The [001] zone-axis bright-field diffraction contrast images of the islands show strong periodi...
| Hauptverfasser: | , , , |
|---|---|
| Format: | Journal article |
| Sprache: | English |
| Veröffentlicht: |
2004
|