NEAR INFRARED PHOTOLUMINESCENCE OF THE HYDROGENATED AMORPHOUS SILICON THIN FILMS WITH IN-SITU EMBEDDED SILICON NANOPARTICLES
The intrinsic hydrogenated silicone layers with embedded silicon nanoparticles were grown in-situ at 250°C on glass substrates by the radio frequency plasma enhanced chemical vapor deposition (CVD) from silane highly diluted in hydrogen. The changes in the optical absorption coefficient were detecte...
Үндсэн зохиолчид: | Z. Remes, J. Stuchlik, Purkrt A., Ledinsky M., Kupcik J. |
---|---|
Формат: | Өгүүллэг |
Хэл сонгох: | English |
Хэвлэсэн: |
University of Chemistry and Technology, Prague
2017-03-01
|
Цуврал: | Ceramics-Silikáty |
Нөхцлүүд: | |
Онлайн хандалт: |
http://www.ceramics-silikaty.cz/index.php?page=cs_detail_doi&id=876
|
Ижил төстэй зүйлс
Ижил төстэй зүйлс
-
Effect of Nitrogen Doping on the Photoluminescence of Amorphous Silicon Oxycarbide Films
-н: Jie Song, зэрэг
Хэвлэсэн: (2019-09-01) -
Gas Permeation Property of Silicon Carbide Membranes Synthesized by Counter-Diffusion Chemical Vapor Deposition
-н: Takayuki Nagano, зэрэг
Хэвлэсэн: (2020-01-01) -
Metastability problems in amorphous silicon
-н: Stanisław M. Pietruszko, зэрэг
Хэвлэсэн: (2001-03-01) -
Amorphous silicon position sensor for telephone terminal/
-н: 175659 Tashiro, Takeda, зэрэг -
Design of MEPCVD system for the preparation of thin film amorphous silicon /
-н: 177855 Putut Marwoto, зэрэг