Electronic structure and optical gain saturation of InAs[sub 1−x]N[sub x]/GaAs quantum dots
The electronic band structures and optical gains of InAs1−xNx /GaAs pyramid quantum dots QDs are calculated using the ten-band k·p model and the valence force field method. The optical gains are calculated using the zero-dimensional optical gain formula with taking into consideration of both ho...
| Main Authors: | , , , , , |
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| Other Authors: | |
| Format: | Journal Article |
| Language: | English |
| Published: |
2013
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| Subjects: | |
| Online Access: | https://hdl.handle.net/10356/100828 http://hdl.handle.net/10220/18168 |