Bottom Contact 100 nm Channel‐Length α‐In2Se3 In‐Plane Ferroelectric Memory

Bottom Contact 100 nm Channel‐Length α‐In2Se3 In‐Plane Ferroelectric Memory

Abstract Owing to the emerging trend of non‐volatile memory and data‐centric computing, the demand for more functional materials and efficient device architecture at the nanoscale is becoming stringent. To date, 2D ferroelectrics are cultivated as channel materials in field‐effect transistors for th...

书目详细资料
Main Authors:	Shurong Miao, Ryosuke Nitta, Seiichiro Izawa, Yutaka Majima
格式:	文件
语言:	English
出版:	Wiley 2023-10-01
丛编:	Advanced Science
主题:	bottom contact in‐plane ferroelectric memory nanogap electrodes nano‐channel memory α‐In2Se3
在线阅读:	https://doi.org/10.1002/advs.202303032

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